january 2002 ? 2002 fairchild semiconductor corporation FDD6612A/fdu6612a rev d1 (w) FDD6612A/fdu6612a 30v n-channel powertrench ? ? ? ? mosfet general description this n-channel mosfet has been designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. it has been optimized for low gate charge, low r ds( on) , fast switching speed and extremely low r ds(on) in a small package. applications ? dc/dc converter ? motor drives features ? 30 a, 30 v r ds(on) = 20 m ? @ v gs = 10 v r ds(on) = 28 m ? @ v gs = 4.5 v ? low gate charge (9 nc typical) ? fast switching ? high performance trench technology for extremely low r ds(on) g s d to-252 d-pak (to-252) g ds i-pak (to-251aa) s g d absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d continuous drain current @t c =25c (note 3) 30 a @t a =25c (note 1a) 9.5 pulsed (note 1a) 60 power dissipation @t c =25c (note 3) 36 @t a =25c (note 1a) 2.8 p d @t a =25c (note 1b) 1.3 w t j , t stg operating and storage junction temperature range -55 to +175 c thermal characteristics r jc thermal resistance, junction-to-case (note 1) 3.5 c/w r ja thermal resistance, junction-to-ambient (note 1a) 45 c/w r ja thermal resistance, junction-to-ambient (note 1b) 96 c/w package marking and ordering information device marking device package reel size tape width quantity FDD6612A FDD6612A d-pak (to-252) 13?? 12mm 2500 units fdu6612a fdu6612a i-pak (to-251) tube n/a 75 FDD6612A/fdu6612a
FDD6612A/fdu6612a rev. d1 (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units drain-source avalanche ratings (note 2) w dss drain-source avalanche energy single pulse, v dd = 15 v, i d =10 a 90 mj i ar drain-source avalanche current 10 a off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = 250 a 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a,referenced to 25 c 22 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 a i gssf gate?body leakage, forward v gs = 20 v, v ds = 0 v 100 na i gssr gate?body leakage, reverse v gs = ?20 v v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 1.6 3 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a,referenced to 25 c -4.2 mv/ c r ds(on) static drain?source on?resistance v gs = 10 v, i d = 9.5 a v gs = 4.5 v, i d = 8 a v gs = 10 v, i d = 9.5 a, t j =125 c 17 24 26 20 28 36 m ? g fs forward transconductance v ds = 5 v, i d = 9.5 a 22 s dynamic characteristics c iss input capacitance 830 pf c oss output capacitance 185 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 80 pf r g gate resistance v gs = 15 mv, f = 1.0 mhz 1.8 ? switching characteristics (note 2) t d(on) turn?on delay time 6 12 ns t r turn?on rise time 10 18 ns t d(off) turn?off delay time 18 29 ns t f turn?off fall time v dd = 15 v, i d = 1 a, v gs = 10 v, r gen = 6 ? 5 12 ns q g total gate charge 9 13 nc q gs gate?source charge 2.8 nc q gd gate?drain charge v ds = 40v, i d = 9.5 a, v gs = 5 v 3.1 nc FDD6612A/fdu6612a
FDD6612A/fdu6612a rev. d1 (w) d r p ds(on) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 2.3 a v sd drain?source diode forward voltage v gs = 0 v, i s = 2.3 a (note 2) 0.7 1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) r ja = 45c/w when mounted on a 1in 2 pad of 2 oz copper b) r ja = 96c/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% 3. maximum current is calculated as: where p d is maximum power dissipation at t c = 25c and r ds(on) is at t j(max) and v gs = 10v. package current limitation is 21a FDD6612A/fdu6612a
FDD6612A/fdu6612a rev. d1 (w) typical characteristics 0 10 20 30 40 50 60 012345 v ds , drain-source voltage (v) i d , drain-source current (a) v gs = 10v 3.0v 4.5v 3.5v 4.0v 5.0v 6.0v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 102030405060 i d , drain current (a) v gs = 3.5v 10v 4.0v 5.0v 4.5v 6.0v 8.0v figure 1. on-region characteristics figure 2. on-resistance variation with drain current and gate voltage 0.6 0.8 1 1.2 1.4 1.6 1.8 -50-25 0 255075100125150 t j , junction temperature ( o c) i d = 9.5a v gs = 10v 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 246810 v gs , gate to source voltage (v) i d = 5a t a = 125 o c t a = 25 o c figure 3. on-resistance variation withtemperature figure 4. on-resistance variation with gate-to-source voltage 0 8 16 24 32 40 123456 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , body diode forward voltage (v) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics figure 6. body diode forward voltage variation with source current and temperature FDD6612A/fdu6612a
FDD6612A/fdu6612a rev. d1 (w) typical characteristics 0 2 4 6 8 10 03691215 q g , gate charge (nc) i d = 9.5a v ds = 5v 10v 15v 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 v ds , drain to source voltage (v) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics figure 8. capacitance characteristics 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage (v) r ds(on) limit v gs = 10v single pulse r ja = 96 o c/w t a = 25 o c dc 10s 1s 100ms 10ms 1ms 100 s 0 20 40 60 0.01 0.1 1 10 100 1000 single pulse time (sec) power (w) single pulse r ja = 96 o c/w t a = 25 o c figure 9. maximum safe operating area figure 10. single pulse maximum power dissipation 0.0001 0.001 0.01 0.1 1 10 100 300 0.0001 0.001 0.01 0.1 1 t , time (sec) transient thermal resistance 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 r(t), normalized effective duty cycle, d = t / t 1 2 r (t) = r(t) * r r = 96c/w ja ja ja t - t = p * r (t) ja a j p(pk) t 1 t 2 figure 11. transient thermal response curve thermal characterization performed using the conditions described in note 1b. transient thermal response will change depending on the circuit board design. FDD6612A/fdu6612a
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